DMC2610E Specs and Replacement

Type Designator: DMC2610E

SMD Transistor Code: R1

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: MINI5-G3-B

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DMC2610E datasheet

 ..1. Size:357K  panasonic

dmc2610e.pdf pdf_icon

DMC2610E

This product complies with the RoHS Directive (EU 2002/95/EC). DMC2610E Silicon NPN epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1 Base (Tr1) 4 Collector (Tr2)... See More ⇒

 7.1. Size:396K  fairchild semi

fdmc2610.pdf pdf_icon

DMC2610E

January 2007 FDMC2610 tm N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200m Features General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5A process. It has been optimized for power management Low Profile - 1mm max in a Pow... See More ⇒

 7.2. Size:359K  panasonic

dmc26100.pdf pdf_icon

DMC2610E

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 7.3. Size:356K  panasonic

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DMC2610E

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Detailed specifications: DMA9640T, DMC26100, DMC26101, DMC26102, DMC26103, DMC26104, DMC26105, DMC26106, BD140, DMC26400, DMC26401, DMC26402, DMC26403, DMC26404, DMC26405, DMC26406, DMC2640F

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