All Transistors. DMC2610E Datasheet

 

DMC2610E Datasheet and Replacement


   Type Designator: DMC2610E
   SMD Transistor Code: R1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: MINI5-G3-B
 

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DMC2610E Datasheet (PDF)

 ..1. Size:357K  panasonic
dmc2610e.pdf pdf_icon

DMC2610E

This product complies with the RoHS Directive (EU 2002/95/EC).DMC2610ESilicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

 7.1. Size:396K  fairchild semi
fdmc2610.pdf pdf_icon

DMC2610E

January 2007FDMC2610tmN-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mFeatures General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5Aprocess. It has been optimized for power management Low Profile - 1mm max in a Pow

 7.2. Size:359K  panasonic
dmc26100.pdf pdf_icon

DMC2610E

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26100Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

 7.3. Size:356K  panasonic
dmc26106.pdf pdf_icon

DMC2610E

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26106Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

Datasheet: DMA9640T , DMC26100 , DMC26101 , DMC26102 , DMC26103 , DMC26104 , DMC26105 , DMC26106 , 2SD718 , DMC26400 , DMC26401 , DMC26402 , DMC26403 , DMC26404 , DMC26405 , DMC26406 , DMC2640F .

History: 2SC5717 | 2SB365 | 2SC3963

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