DMC56200 Todos los transistores

 

DMC56200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMC56200
   Código: P4
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SMINI5-F3-B
     - Selección de transistores por parámetros

 

DMC56200 Datasheet (PDF)

 ..1. Size:366K  panasonic
dmc56200.pdf pdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56200Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 7.1. Size:364K  panasonic
dmc56201.pdf pdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56201Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (

 7.2. Size:369K  panasonic
dmc56205.pdf pdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56205Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 9.1. Size:506K  fairchild semi
fdmc5614p.pdf pdf_icon

DMC56200

September 2010FDMC5614PtmP-Channel PowerTrench MOSFET -60V, -13.5A, 100mFeatures General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7AThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4Aoptimized for power management applications requiring a wi

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TN3467 | BFS91A | FBP5096G3

 

 
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