DMC56200 Specs and Replacement

Type Designator: DMC56200

SMD Transistor Code: P4

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SMINI5-F3-B

 DMC56200 Substitution

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DMC56200 datasheet

 ..1. Size:366K  panasonic

dmc56200.pdf pdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56200 Silicon NPN epitaxial planar type For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec... See More ⇒

 7.1. Size:364K  panasonic

dmc56201.pdf pdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56201 Silicon NPN epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1 Emitter (Tr1) 4 Collector (... See More ⇒

 7.2. Size:369K  panasonic

dmc56205.pdf pdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56205 Silicon NPN epitaxial planar type For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec... See More ⇒

 9.1. Size:506K  fairchild semi

fdmc5614p.pdf pdf_icon

DMC56200

September 2010 FDMC5614P tm P-Channel PowerTrench MOSFET -60V, -13.5A, 100m Features General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4A optimized for power management applications requiring a wi... See More ⇒

Detailed specifications: DMC56104, DMC56105, DMC56106, DMC56107, DMC5610E, DMC5610L, DMC5610M, DMC5610N, 2SC945, DMC56201, DMC56205, DMC56400, DMC56401, DMC56402, DMC56403, DMC56404, DMC56405

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