DMC56200 - аналоги и даташиты биполярного транзистора

 

DMC56200 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: DMC56200
   Маркировка: P4
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 160
   Корпус транзистора: SMINI5-F3-B

 Аналоги (замена) для DMC56200

 

DMC56200 Datasheet (PDF)

 ..1. Size:366K  panasonic
dmc56200.pdfpdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56200 Silicon NPN epitaxial planar type For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 7.1. Size:364K  panasonic
dmc56201.pdfpdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56201 Silicon NPN epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1 Emitter (Tr1) 4 Collector (

 7.2. Size:369K  panasonic
dmc56205.pdfpdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56205 Silicon NPN epitaxial planar type For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 9.1. Size:506K  fairchild semi
fdmc5614p.pdfpdf_icon

DMC56200

September 2010 FDMC5614P tm P-Channel PowerTrench MOSFET -60V, -13.5A, 100m Features General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4A optimized for power management applications requiring a wi

Другие транзисторы... DMC56104 , DMC56105 , DMC56106 , DMC56107 , DMC5610E , DMC5610L , DMC5610M , DMC5610N , 2SC945 , DMC56201 , DMC56205 , DMC56400 , DMC56401 , DMC56402 , DMC56403 , DMC56404 , DMC56405 .

History: CHDTC124TKGP | DNLS160V | BU361 | 2SA813

 

 
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