Справочник транзисторов. DMC56200

 

Биполярный транзистор DMC56200 Даташит. Аналоги


   Наименование производителя: DMC56200
   Маркировка: P4
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 160
   Корпус транзистора: SMINI5-F3-B
 

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DMC56200 Datasheet (PDF)

 ..1. Size:366K  panasonic
dmc56200.pdfpdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56200Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 7.1. Size:364K  panasonic
dmc56201.pdfpdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56201Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (

 7.2. Size:369K  panasonic
dmc56205.pdfpdf_icon

DMC56200

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56205Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 9.1. Size:506K  fairchild semi
fdmc5614p.pdfpdf_icon

DMC56200

September 2010FDMC5614PtmP-Channel PowerTrench MOSFET -60V, -13.5A, 100mFeatures General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7AThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4Aoptimized for power management applications requiring a wi

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