DRA5114E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA5114E
Código: LB
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: SMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRA5114E
DRA5114E Datasheet (PDF)
dra5114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114EDRA2114E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free
dra5114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114TDRA2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
dra5114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114YDRA2114Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free
dra5115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115TDRA2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
dra5115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115GDRA2115G in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115EDRA2115E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5113ZDRA2113Z in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KRC651F | 2SC905 | KTD1303 | NPS2218A | NKT216 | MN49 | KSC5047
History: KRC651F | 2SC905 | KTD1303 | NPS2218A | NKT216 | MN49 | KSC5047
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050