Биполярный транзистор DRA5114E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA5114E
Маркировка: LB
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 35
Корпус транзистора: SMINI3-F2-B
DRA5114E Datasheet (PDF)
dra5114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114EDRA2114E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free
dra5114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114TDRA2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
dra5114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114YDRA2114Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free
dra5115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115TDRA2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
dra5115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115GDRA2115G in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115EDRA2115E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5113ZDRA2113Z in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050