All Transistors. DRA5114E Datasheet

 

DRA5114E Datasheet and Replacement


   Type Designator: DRA5114E
   SMD Transistor Code: LB
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SMINI3-F2-B
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DRA5114E Datasheet (PDF)

 ..1. Size:414K  panasonic
 dra5114e.pdf pdf_icon

DRA5114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114EDRA2114E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free

 7.1. Size:414K  panasonic
 dra5114t.pdf pdf_icon

DRA5114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114TDRA2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

 7.2. Size:413K  panasonic
 dra5114y.pdf pdf_icon

DRA5114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114YDRA2114Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free

 8.1. Size:418K  panasonic
 dra5115t.pdf pdf_icon

DRA5114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115TDRA2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

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Keywords - DRA5114E transistor datasheet

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