DRC2123J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRC2123J
Código: N4
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: MINI3-G3-B
- Selección de transistores por parámetros
DRC2123J Datasheet (PDF)
drc2123j.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123JSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
drc2123e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se
drc2124x.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E
drc2124t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of compone
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: PZT195 | 2SA1427O | 2N1666 | MMBTA06Q | 2SC1854 | DTA123JET1G | NA01EX
History: PZT195 | 2SA1427O | 2N1666 | MMBTA06Q | 2SC1854 | DTA123JET1G | NA01EX



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