DRC2123J Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRC2123J
Código: N4
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 80
Encapsulados: MINI3-G3-B
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DRC2123J datasheet
drc2123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRC2123E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1 Base Embossed type (Thermo-compression se
drc2124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRC2124X Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E
drc2124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRC2124T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of compone
Otros transistores... DRC2114E, DRC2114T, DRC2114W, DRC2114Y, DRC2115E, DRC2115G, DRC2115T, DRC2123E, 2N3906, DRC2124E, DRC2124T, DRC2124X, DRC2143E, DRC2143T, DRC2143X, DRC2143Y, DRC2143Z
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