Биполярный транзистор DRC2123J - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRC2123J
Маркировка: N4
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: MINI3-G3-B
DRC2123J Datasheet (PDF)
drc2123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123JSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
drc2123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se
drc2124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E
drc2124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of compone
drc2124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS