DRC2123J Datasheet, Equivalent, Cross Reference Search
Type Designator: DRC2123J
SMD Transistor Code: N4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: MINI3-G3-B
DRC2123J Transistor Equivalent Substitute - Cross-Reference Search
DRC2123J Datasheet (PDF)
drc2123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123JSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
drc2123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se
drc2124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E
drc2124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of compone
drc2124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
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