DTA123EEFRA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTA123EEFRA

Código: 12

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT-416

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DTA123EEFRA datasheet

 ..1. Size:2081K  rohm
dta123eefra dta123ekafra dta123emfha dta123euafra.pdf pdf_icon

DTA123EEFRA

DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC -50V IC(MAX.) -100mA R1 2.2k DTA123EM DTA123EE DTA123EMFHA DTA123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2

 5.1. Size:416K  nxp
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf pdf_icon

DTA123EEFRA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.2. Size:139K  nxp
pdta123eef pdta123ek pdta123es.pdf pdf_icon

DTA123EEFRA

DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 02 Supersedes data of 2004 Apr 07 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI

 6.1. Size:338K  rohm
dta123ee.pdf pdf_icon

DTA123EEFRA

DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Outline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2k DTA123EM DTA123EE R2 2.2k (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3 OUT OUT Features IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2k . IN GND GND 2) Built-in bias re

Otros transistores... DTA115EM3, DTA115EM3T5G, DTA115EMFHA, DTA115EN3, DTA115EUAFRA, DTA115TET1G, DTA115TM3, DTA115TM3T5G, C3198, DTA123EET1G, DTA123EKAFRA, DTA123EM3, DTA123EM3T5G, DTA123EMFHA, DTA123EUAFRA, DTA123JC3, DTA123JEFRA