DTA123EEFRA - описание и поиск аналогов

 ..1. Size:2081K  rohm
 dta123eefra dta123ekafra dta123emfha dta123euafra.pdf 

DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC -50V IC(MAX.) -100mA R1 2.2k DTA123EM DTA123EE DTA123EMFHA DTA123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2

 5.1. Size:416K  nxp
 pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.2. Size:139K  nxp
 pdta123eef pdta123ek pdta123es.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 02 Supersedes data of 2004 Apr 07 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI

 6.1. Size:338K  rohm
 dta123ee.pdf 

DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Outline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2k DTA123EM DTA123EE R2 2.2k (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3 OUT OUT Features IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2k . IN GND GND 2) Built-in bias re

 6.2. Size:68K  rohm
 dta123ee-eua-eka 12sot416 323 346 dta123eka dta123esa.pdf 

Transistors Digital transistors (built-in resistors) DTA123EE / DTA123EUA / DTA123EKA / DTA123ESA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bi

 6.3. Size:227K  diodes
 ddta123ee.pdf 

DDTA (R1 = R2 SERIES) E DDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)

 6.4. Size:222K  onsemi
 dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf 

DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 6.5. Size:768K  lrc
 ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf 

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 6.6. Size:133K  chenmko
 chdta123eegp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHDTA123EEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu