DTA123EEFRA Specs and Replacement
Type Designator: DTA123EEFRA
SMD Transistor Code: 12
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SOT-416
DTA123EEFRA Substitution
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DTA123EEFRA datasheet
dta123eefra dta123ekafra dta123emfha dta123euafra.pdf ![]()
DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC -50V IC(MAX.) -100mA R1 2.2k DTA123EM DTA123EE DTA123EMFHA DTA123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2... See More ⇒
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf ![]()
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
pdta123eef pdta123ek pdta123es.pdf ![]()
DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 02 Supersedes data of 2004 Apr 07 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI... See More ⇒
DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Outline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2k DTA123EM DTA123EE R2 2.2k (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3 OUT OUT Features IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2k . IN GND GND 2) Built-in bias re... See More ⇒
Detailed specifications: DTA115EM3, DTA115EM3T5G, DTA115EMFHA, DTA115EN3, DTA115EUAFRA, DTA115TET1G, DTA115TM3, DTA115TM3T5G, C3198, DTA123EET1G, DTA123EKAFRA, DTA123EM3, DTA123EM3T5G, DTA123EMFHA, DTA123EUAFRA, DTA123JC3, DTA123JEFRA
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