2SA1009 Datasheet. Equivalente

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 2sa1009 2sa1009 2sa1009a.pdf

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 2sa1009.pdf

isc Silicon PNP Power Transistor 2SA1009 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1V(Max.)@ IC= -0.3A Fast Switching Speed Wide Reverse Bias Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, DC/DC converters and High frequency power

 0.1. Size:216K  inchange semiconductor
 2sa1009a.pdf

isc Silicon PNP Power Transistor 2SA1009A DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1V(Max.)@ IC= -0.3A Fast Switching Speed Wide Reverse Bias Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, DC/DC converters and High frequency power amplifier application.

 8.1. Size:109K  nec
 2sa1008.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SA1008 TO-220AB FEATURES (TO-220AB)

 8.2. Size:194K  nec
 2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf

This Material Copyrighted By Its Respective Manufacturer

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 2sa100.pdf

 8.4. Size:216K  jmnic
 2sa1008.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION With TO-220 package Complement to type 2SC2331 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplifie

 8.5. Size:199K  jmnic
 2sa1006 2sa1006a 2sa1006b.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3

 8.6. Size:195K  inchange semiconductor
 2sa1007.pdf

isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Complement to Type 2SC2337 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 8.7. Size:612K  inchange semiconductor
 2sa1006.pdf

 8.8. Size:194K  inchange semiconductor
 2sa1003.pdf

isc Silicon PNP Power Transistor 2SA1003 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

 8.9. Size:208K  inchange semiconductor
 2sa1008.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@ I = -1A CE(sat) C Fast Switching Speed Complement to Type 2SC2331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converte

 8.10. Size:207K  inchange semiconductor
 2sa1006a.pdf

isc Silicon PNP Power Transistor 2SA1006A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC2336A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE

 8.11. Size:327K  inchange semiconductor
 2sa1006b.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -250Vdc (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC2336B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency p

 8.12. Size:124K  inchange semiconductor
 2sa1006 2sa1006a 2sa1006b.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

 8.13. Size:195K  inchange semiconductor
 2sa1001.pdf

isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -130V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

 8.14. Size:193K  inchange semiconductor
 2sa1002.pdf

isc Silicon PNP Power Transistor 2SA1002 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta