2SA1009 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1009
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
2SA1009 Transistor Equivalent Substitute - Cross-Reference Search
2SA1009 Datasheet (PDF)
2sa1009.pdf
isc Silicon PNP Power Transistor 2SA1009DESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power
2sa1009a.pdf
isc Silicon PNP Power Transistor 2SA1009ADESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power amplifier application.
2sa1008.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1008 is a mold power transistor developed for high-speed ORDERING INFORMATIONswitching, and is ideal for use as a driver in devices such as switchingPart No. Packageregulators, DC/DC converters, and high-frequency power amplifiers.2SA1008 TO-220ABFEATURES(TO-220AB)
2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf
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2sa1008.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION With TO-220 package Complement to type 2SC2331 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplifie
2sa1006 2sa1006a 2sa1006b.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3
2sa1007.pdf
isc Silicon PNP Power Transistor 2SA1007DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC2337Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sa1003.pdf
isc Silicon PNP Power Transistor 2SA1003DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sa1008.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1008DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@ I = -1ACE(sat) CFast Switching SpeedComplement to Type 2SC2331Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in devices such as switchingregulators, DC/DC converte
2sa1006a.pdf
isc Silicon PNP Power Transistor 2SA1006ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE
2sa1006b.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1006BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -250Vdc (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency p
2sa1006 2sa1006a 2sa1006b.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
2sa1001.pdf
isc Silicon PNP Power Transistor 2SA1001DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -130V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sa1002.pdf
isc Silicon PNP Power Transistor 2SA1002DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
Datasheet: 2SA1004 , 2SA1005 , 2SA1006 , 2SA1006A , 2SA1006B , 2SA1007 , 2SA1007A , 2SA1008 , A1266 , 2SA1009A , 2SA101 , 2SA1010 , 2SA1011 , 2SA1011D , 2SA1011E , 2SA1012 , 2SA1012O .
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS