2SA1011E Todos los transistores

 

2SA1011E Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1011E
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 180 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO220
 

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Principales características: 2SA1011E

 7.1. Size:42K  sanyo
2sa1011 2sc2344.pdf pdf_icon

2SA1011E

Ordering number ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit mm 2010C [2SA1011/2SC2344] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 2 3 1 Base ( ) 2SA1011 2 Collector 3 Emitter 2.55 2.55 Specifications SANYO TO220AB Absolute Maximum Ratings at Ta = 2

 7.2. Size:211K  jmnic
2sa1011.pdf pdf_icon

2SA1011E

JMnic Product Specification Silicon PNP Power Transistors 2SA1011 DESCRIPTION With TO-220 package Complement to type 2SC2344 APPLICATIONS High voltage switching , Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PA

 7.3. Size:186K  lzg
2sa1011 3ca1011.pdf pdf_icon

2SA1011E

2SA1011(3CA1011) PNP /SILICON PNP TRANSISTOR 100W Purpose High voltage switching, AF power amplifier, 100W output predriver applications. 2SC2344(3DA2344) Features complementary pair with 2SC2344(3DA2344). /Absolute maximum ratings(Ta=25 )

 7.4. Size:203K  inchange semiconductor
2sa1011.pdf pdf_icon

2SA1011E

sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Typ.)@ I = -0.5A CE(sat) C Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Complement to Type 2SC2344 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, audio frequency power ampl

Otros transistores... 2SA1007A , 2SA1008 , 2SA1009 , 2SA1009A , 2SA101 , 2SA1010 , 2SA1011 , 2SA1011D , 2SC2383 , 2SA1012 , 2SA1012O , 2SA1012Y , 2SA1013 , 2SA1013O , 2SA1013R , 2SA1014 , 2SA1015 .

 

 
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