DTC115TE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC115TE
Código: 9_`09
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-416
Búsqueda de reemplazo de transistor bipolar DTC115TE
DTC115TE Datasheet (PDF)
dtc115te.pdf
DTC115T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R1100kWDTC115TM DTC115TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3Collector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2)
dtc115te dtc115tm.pdf
DTC115T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R1100kDTC115TM DTC115TE(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC115TUA DTC115T
ddtc115te.pdf
DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv
dtc115tet1g dtc115tm3 dtc115tm3t5g.pdf
MUN2241, MMUN2241L,MUN5241, DTC115TE,DTC115TM3, NSBC115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
ldtc115tet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC115TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
chdtc115tegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC115TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c
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