DTC115TE Datasheet and Replacement

DTC115T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R1100kWDTC115TM DTC115TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3Collector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2)

DTC115T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R1100kDTC115TM DTC115TE(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC115TUA DTC115T

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

MUN2241, MMUN2241L,MUN5241, DTC115TE,DTC115TM3, NSBC115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC115TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

CHENMKO ENTERPRISE CO.,LTDCHDTC115TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c