DTC123JN3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC123JN3

Código: 8M

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-23

 Búsqueda de reemplazo de DTC123JN3

- Selecciónⓘ de transistores por parámetros

 

DTC123JN3 datasheet

 ..1. Size:290K  cystek
dtc123jn3.pdf pdf_icon

DTC123JN3

Spec. No. C360N3 Issued Date 2005.09.08 CYStech Electronics Corp. Revised Date 2011.01.24 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC123JN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 7.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

DTC123JN3

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 7.2. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

DTC123JN3

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

 7.3. Size:56K  motorola
pdtc123jt 3.pdf pdf_icon

DTC123JN3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design

Otros transistores... DTC115TET1G, DTC115TM, DTC123JEFRA, DTC123JET1G, DTC123JKAFRA, DTC123JM3, DTC123JM3T5G, DTC123JMFHA, 8550, DTC123JUAFRA, DTC123TE, DTC123TET1G, DTC123TKA, DTC123TM3, DTC123TM3T5G, DTC123TN3, DTC123YEFRA