DTC123JN3 Todos los transistores

 

DTC123JN3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC123JN3
   Código: 8M
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de DTC123JN3

   - Selección ⓘ de transistores por parámetros

 

DTC123JN3 Datasheet (PDF)

 ..1. Size:290K  cystek
dtc123jn3.pdf pdf_icon

DTC123JN3

Spec. No. : C360N3 Issued Date : 2005.09.08 CYStech Electronics Corp.Revised Date : 2011.01.24 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC123JN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 7.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 7.2. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 7.3. Size:56K  motorola
pdtc123jt 3.pdf pdf_icon

DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

Otros transistores... DTC115TET1G , DTC115TM , DTC123JEFRA , DTC123JET1G , DTC123JKAFRA , DTC123JM3 , DTC123JM3T5G , DTC123JMFHA , D209L , DTC123JUAFRA , DTC123TE , DTC123TET1G , DTC123TKA , DTC123TM3 , DTC123TM3T5G , DTC123TN3 , DTC123YEFRA .

History: CTLM3410-M832D | DTA144EUA | RN2327A | 2SC1209 | NSVBA114EDXV6T1G | DT6105 | 3DG1740M

 

 
Back to Top

 


 
.