All Transistors. DTC123JN3 Datasheet

 

DTC123JN3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTC123JN3
   SMD Transistor Code: 8M
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-23

 DTC123JN3 Transistor Equivalent Substitute - Cross-Reference Search

   

DTC123JN3 Datasheet (PDF)

 ..1. Size:290K  cystek
dtc123jn3.pdf

DTC123JN3
DTC123JN3

Spec. No. : C360N3 Issued Date : 2005.09.08 CYStech Electronics Corp.Revised Date : 2011.01.24 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC123JN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 7.1. Size:54K  motorola
pdtc123jef 1.pdf

DTC123JN3
DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 7.2. Size:55K  motorola
pdtc123je 3.pdf

DTC123JN3
DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 7.3. Size:56K  motorola
pdtc123jt 3.pdf

DTC123JN3
DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

 7.4. Size:54K  philips
pdtc123jef 1.pdf

DTC123JN3
DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 7.5. Size:55K  philips
pdtc123je 3.pdf

DTC123JN3
DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 7.6. Size:174K  philips
pdtc123j series.pdf

DTC123JN3
DTC123JN3

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123J seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Aug 13Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123J seriesR1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 7.7. Size:56K  philips
pdtc123jt 3.pdf

DTC123JN3
DTC123JN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

 7.8. Size:73K  rohm
dtc123jub.pdf

DTC123JN3
DTC123JN3

Transistors DTC123JUB 100mA / 50V Digital transistors (with built-in resistors) DTC123JUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fi

 7.9. Size:152K  rohm
dtc123jeb.pdf

DTC123JN3
DTC123JN3

100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)

 7.10. Size:140K  rohm
dtc123j-series dtc123je.pdf

DTC123JN3
DTC123JN3

100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati

 7.11. Size:138K  rohm
dtc123jka.pdf

DTC123JN3
DTC123JN3

100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati

 7.12. Size:1527K  rohm
dtc123jefra dtc123jkafra dtc123jmfha dtc123juafra.pdf

DTC123JN3
DTC123JN3

DTC123J seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R12.2kDTC123JM DTC123JEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123

 7.13. Size:76K  rohm
dtc123je-jua-jka e42 sot416 323 346.pdf

DTC123JN3
DTC123JN3

DTC123JE / DTC123JUA / DTC123JKA / DTC123JSATransistorDigital transistors (built-in resistors)DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Features External dimensions (Units : mm)1) Built-in bias resistors enable the1.60.2DTC123JEconfiguration of an inverter circuit1.00.1without connecting external input 0.70.10.5 0.5+0.1 +0.10.2-0.050.2-0.05 0.550.1resist

 7.14. Size:204K  diodes
ddtc123jka.pdf

DTC123JN3
DTC123JN3

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

 7.15. Size:93K  diodes
ddtc123jca.pdf

DTC123JN3
DTC123JN3

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

 7.16. Size:197K  diodes
ddtc123jlp.pdf

DTC123JN3
DTC123JN3

DDTCxxxxLP (R1R2 Series)PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0

 7.17. Size:237K  diodes
ddtc123je.pdf

DTC123JN3
DTC123JN3

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

 7.18. Size:203K  diodes
ddtc123jua.pdf

DTC123JN3
DTC123JN3

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

 7.19. Size:224K  mcc
dtc123jua sot-323.pdf

DTC123JN3
DTC123JN3

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthDTC123JUAMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epitaxial Planar Die Construction Complementary NPN Types AvailableDigital Transistors Built-in Bias Resistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering

 7.20. Size:156K  onsemi
dtc123jm3.pdf

DTC123JN3
DTC123JN3

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)

 7.21. Size:144K  onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf

DTC123JN3
DTC123JN3

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 7.22. Size:82K  onsemi
dtc123jm3t5g dtc124em3t5g dtc124xm3t5g dtc143em3t5g dtc143tm3t5g dtc143zm3t5g dtc144em3t5g.pdf

DTC123JN3
DTC123JN3

DTC114EM3T5G SeriesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resis

 7.23. Size:399K  onsemi
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf

DTC123JN3
DTC123JN3

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

 7.24. Size:180K  utc
dtc123j.pdf

DTC123JN3
DTC123JN3

UNISONIC TECHNOLOGIES CO., LTD DTC123J NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. Th

 7.25. Size:345K  secos
dtc123jsa dtc123jua.pdf

DTC123JN3
DTC123JN3

DTC123JE/DTC123JUA/DTC123JKADTC123JCA/TC123JSAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 7.26. Size:347K  secos
dtc123jseries.pdf

DTC123JN3
DTC123JN3

DTC123JE/DTC123JUA/DTC123JKADTC123JCA/TC123JSAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 7.27. Size:145K  lge
dtc123j.pdf

DTC123JN3
DTC123JN3

DTC123JE/DTC123JUA/DTC123JCADTC123JKA/DTC123JSADigital Transistor(NPN)Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost com

 7.28. Size:400K  willas
dtc123jca.pdf

DTC123JN3
DTC123JN3

FM120-M WILLASTHRUDTC123JCANPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board s

 7.29. Size:403K  willas
dtc123jua.pdf

DTC123JN3
DTC123JN3

FM120-M WILLASTHRUDTC123JUANPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spa

 7.30. Size:545K  lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC123JN3
DTC123JN3

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.31. Size:545K  lrc
ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC123JN3
DTC123JN3

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.32. Size:306K  first silicon
dtc123j.pdf

DTC123JN3
DTC123JN3

SEMICONDUCTORDTC123JTECHNICAL DATABias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkBThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorKTransistor) contains a single transistor with a monolithic bias networkresistor. The BRT eliminates the

 7.33. Size:90K  kexin
dtc123jua.pdf

DTC123JN3
DTC123JN3

SMD Type TransistorsDigital TransistorsDTC123JUA (KDTC123JUA) Features Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with completeisolation to allow positive biasing of the input.They also have theadvantage of almost completely eliminatin

 7.34. Size:150K  chenmko
chdtc123jegp.pdf

DTC123JN3
DTC123JN3

CHENMKO ENTERPRISE CO.,LTDCHDTC123JEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 7.35. Size:134K  chenmko
chdtc123jugp.pdf

DTC123JN3
DTC123JN3

CHENMKO ENTERPRISE CO.,LTDCHDTC123JUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 7.36. Size:127K  chenmko
chdtc123jkgp.pdf

DTC123JN3
DTC123JN3

CHENMKO ENTERPRISE CO.,LTDCHDTC123JKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.37. Size:1628K  cn shikues
dtc123je.pdf

DTC123JN3
DTC123JN3

DTC123JEDigital Transistors (Built-in Resistors) DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almos

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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