EMD12 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: EMD12
   Código: D12
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.03 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SC-107C

Búsqueda de reemplazo de transistor bipolar EMD12

EMD12 Datasheet (PDF)

..1. Size:535K rohm
emd12 umd12n.pdf

EMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R147kWEMD12 UMD12N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR1

..2. Size:70K rohm
emd12 umd12n.pdf

EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N Features EMD121) Both the DTA144E and DTC144E in a EMT or UMT ( ) ( )4 3package. ( ) ( )5 2( ) ( )6 11.21.6 Equivalent circuit (3) (2) (1)ROHM : EMT6 Each lead has same dimensionsR1 R2DTr1DTr2 UMD12NR2R1(4) (5) (6)R1=47kR2=47k 1.252.1 Package,

..3. Size:703K htsemi
emd12.pdf

EMD12 General purpose transistors (dual transistors)FEATURES SOT-563 Both the DTC144E chip and DTA144E chip in a package Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 Marking: D12 Equivalent circuit TR1 Absolute maximum ratings (Ta=25) Paramete

0.1. Size:140K philips
pemd12 pumd12.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPEMD12; PUMD12NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Nov 7NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD12; PUMD12R1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UN

0.2. Size:1339K rohm
emd12fha umd12nfha.pdf

EMD12FHA / UMD12NFHAEMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R147kWEMD12FHA UMD12NFHAEMD12UMD12N(SC-107C)R2 SOT-353 (SC-88)47kWPara

0.3. Size:116K chenmko
chemd12gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMD12GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050