EMD12 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMD12
SMD Transistor Code: D12
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SC-107C
EMD12 Transistor Equivalent Substitute - Cross-Reference Search
EMD12 Datasheet (PDF)
emd12 umd12n.pdf
EMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R147kWEMD12 UMD12N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR1
emd12 umd12n.pdf
EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N Features EMD121) Both the DTA144E and DTC144E in a EMT or UMT ( ) ( )4 3package. ( ) ( )5 2( ) ( )6 11.21.6 Equivalent circuit (3) (2) (1)ROHM : EMT6 Each lead has same dimensionsR1 R2DTr1DTr2 UMD12NR2R1(4) (5) (6)R1=47kR2=47k 1.252.1 Package,
emd12.pdf
EMD12 General purpose transistors (dual transistors)FEATURES SOT-563 Both the DTC144E chip and DTA144E chip in a package Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 Marking: D12 Equivalent circuit TR1 Absolute maximum ratings (Ta=25) Paramete
pemd12 pumd12.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD12; PUMD12NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Nov 7NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD12; PUMD12R1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UN
emd12fha umd12nfha.pdf
EMD12FHA / UMD12NFHAEMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R147kWEMD12FHA UMD12NFHAEMD12UMD12N(SC-107C)R2 SOT-353 (SC-88)47kWPara
chemd12gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMD12GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2S012A
