EMD3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer

EMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline(6) EMT6 UMT6Parameter Value (5) (6) (4) (5) (4) VCC50V(1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMD3 UMD3N (SC-107C) R2 SOT-353 (SC-88) 10kWSMT6(4) (5) (6) (3) Parameter Valu

EMD3DIGITAL TRANSISTOR (NPN+ PNP)FEATURES SOT-563 DTA114E and DTC114E transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING: D3 Absolute maximum ratings(Ta=25 ) Parameter Symbol Unit Limits Supply voltage VCC 50 VInput voltage VIN -10~40 VI

PEMD30; PUMD30NPN/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 01 31 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD30 SOT66

PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 10 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package PNP/PNP NPN/NPN complement complementNXP JEITAPEMD3 SOT666 - PEMB11 PEMH11PIMD3 SOT457 SC-74 - -PUMD3 SOT363 SC-8

PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 11 25 September 2013 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPN Package complement complement configurationNexper

EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)

EMD30DatasheetPNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6Parameter Value(6)(5)(4)VCC30V(1)(2)IC(MAX.)200mA(3)R11kEMD30(SC-107C)R210kParameter ValueVCC50VIC(MAX.)100mAR110kR210kFeatures Inner circuit1) Both the DTB713Z chip and DTC1

EMD38DatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6Parameter Value(6) (5) (4) VCC50V(1) (2) IC(MAX.)100mA (3) R110kWEMD38 (SC-107C) R247kWParameter ValueVCC-50VIC(MAX.)-100mAR11kWR210kWlFeatures lInner circuit1) Both the DTC114Y chip and DTA113Z ch

EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)

CHENMKO ENTERPRISE CO.,LTDCHEMD3GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHEMD37GPDual Digital Silicon TransistorDTr1:VOLTAGE 50 Volts CURRENT 70 mAmpereDTr2:VOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter