EMD3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: EMD3
   Código: D3
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC-107C

Búsqueda de reemplazo de transistor bipolar EMD3

EMD3 Datasheet (PDF)

..1. Size:98K rohm
emd3 umd3n imd3a umd3n.pdf

EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer

..2. Size:565K rohm
emd3.pdf

EMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline(6) EMT6 UMT6Parameter Value (5) (6) (4) (5) (4) VCC50V(1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMD3 UMD3N (SC-107C) R2 SOT-353 (SC-88) 10kWSMT6(4) (5) (6) (3) Parameter Valu

..3. Size:724K htsemi
emd3.pdf

EMD3DIGITAL TRANSISTOR (NPN+ PNP)FEATURES SOT-563 DTA114E and DTC114E transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING: D3 Absolute maximum ratings(Ta=25 ) Parameter Symbol Unit Limits Supply voltage VCC 50 VInput voltage VIN -10~40 VI

0.1. Size:76K philips
pemd30 pumd30.pdf

PEMD30; PUMD30NPN/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 01 31 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD30 SOT66

0.2. Size:306K philips
pemd3 pimd3 pumd3.pdf

PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 10 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package PNP/PNP NPN/NPN complement complementNXP JEITAPEMD3 SOT666 - PEMB11 PEMH11PIMD3 SOT457 SC-74 - -PUMD3 SOT363 SC-8

0.3. Size:1688K nxp
pemd3 pimd3 pumd3.pdf

PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 11 25 September 2013 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPN Package complement complement configurationNexper

0.4. Size:1403K rohm
emd3fha umd3nfha.pdf

EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)

0.5. Size:271K rohm
emd30.pdf

EMD30DatasheetPNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6Parameter Value(6)(5)(4)VCC30V(1)(2)IC(MAX.)200mA(3)R11kEMD30(SC-107C)R210kParameter ValueVCC50VIC(MAX.)100mAR110kR210kFeatures Inner circuit1) Both the DTB713Z chip and DTC1

0.6. Size:498K rohm
emd38.pdf

EMD38DatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6Parameter Value(6) (5) (4) VCC50V(1) (2) IC(MAX.)100mA (3) R110kWEMD38 (SC-107C) R247kWParameter ValueVCC-50VIC(MAX.)-100mAR11kWR210kWlFeatures lInner circuit1) Both the DTC114Y chip and DTA113Z ch

0.7. Size:1440K rohm
emd3fha umd3nfha imd3afra.pdf

0.8. Size:121K chenmko
chemd3gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMD3GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit

0.9. Size:89K chenmko
chemd37gp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHEMD37GPDual Digital Silicon TransistorDTr1:VOLTAGE 50 Volts CURRENT 70 mAmpereDTr2:VOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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