EMD3 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMD3
SMD Transistor Code: D3
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC-107C
EMD3 Transistor Equivalent Substitute - Cross-Reference Search
EMD3 Datasheet (PDF)
emd3 umd3n imd3a umd3n.pdf
EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer
emd3.pdf
EMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline(6) EMT6 UMT6Parameter Value (5) (6) (4) (5) (4) VCC50V(1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMD3 UMD3N (SC-107C) R2 SOT-353 (SC-88) 10kWSMT6(4) (5) (6) (3) Parameter Valu
emd3.pdf
EMD3DIGITAL TRANSISTOR (NPN+ PNP)FEATURES SOT-563 DTA114E and DTC114E transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING: D3 Absolute maximum ratings(Ta=25 ) Parameter Symbol Unit Limits Supply voltage VCC 50 VInput voltage VIN -10~40 VI
pemd30 pumd30.pdf
PEMD30; PUMD30NPN/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 01 31 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD30 SOT66
pemd3 pimd3 pumd3.pdf
PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 10 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package PNP/PNP NPN/NPN complement complementNXP JEITAPEMD3 SOT666 - PEMB11 PEMH11PIMD3 SOT457 SC-74 - -PUMD3 SOT363 SC-8
pemd3 pimd3 pumd3.pdf
PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 11 25 September 2013 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPN Package complement complement configurationNexper
emd3fha umd3nfha.pdf
EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)
emd30.pdf
EMD30DatasheetPNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6Parameter Value(6)(5)(4)VCC30V(1)(2)IC(MAX.)200mA(3)R11kEMD30(SC-107C)R210kParameter ValueVCC50VIC(MAX.)100mAR110kR210kFeatures Inner circuit1) Both the DTB713Z chip and DTC1
emd38.pdf
EMD38DatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6Parameter Value(6) (5) (4) VCC50V(1) (2) IC(MAX.)100mA (3) R110kWEMD38 (SC-107C) R247kWParameter ValueVCC-50VIC(MAX.)-100mAR11kWR210kWlFeatures lInner circuit1) Both the DTC114Y chip and DTA113Z ch
emd3fha umd3nfha imd3afra.pdf
EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)
chemd3gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMD3GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit
chemd37gp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHEMD37GPDual Digital Silicon TransistorDTr1:VOLTAGE 50 Volts CURRENT 70 mAmpereDTr2:VOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N974
