EMD5
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMD5
Código: D5
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC-107C
Búsqueda de reemplazo de transistor bipolar EMD5
EMD5
Datasheet (PDF)
..1. Size:528K rohm
emd5 umd5n.pdf
EMD5 / UMD5NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R147kWEMD5 UMD5N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR14.7k
..2. Size:77K rohm
emd5 umd5n.pdf
EMD5 / UMD5N Transistors General purpose (dual digital transistors) EMD5 / UMD5N Features External dimensions (Unit : mm) 1) Both the DTA143X chip and DTC144E chip in an EMD5EMT6 or UMT6 package. ( ) ( )4 32) Mounting possible with EMT3 or UMT3 automatic ( ) ( )5 26 1mounting machines. ( ) ( )1.21.63) Transistor elements are independent, eliminating inter
0.1. Size:911K rohm
emd59.pdf
EMD59DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R110kEMD59R2 (SC-107C)47k Parameter ValueVCC-50VIC(MAX.)-100mAR110kR247klFeatures lInner circuitl l
0.2. Size:985K rohm
emd53.pdf
EMD53DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R110kEMD53R2 (SC-107C)10k Parameter ValueVCC-50VIC(MAX.)-100mAR110kR210klFeatures lInner circuitl l
0.3. Size:836K rohm
emd52.pdf
EMD52DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R122kEMD52R2 (SC-107C)22k Parameter ValueVCC-50VIC(MAX.)-100mAR122kR222klFeatures lInner circuitl l
0.4. Size:59K onsemi
emd5dxv6 emd5dxv6t5g.pdf
EMD5DXV6T5GDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base R1 R2resistor and a base-emitter resistor. These digital transistors areQ1designed to r
0.5. Size:61K onsemi
emd5dxv6-d.pdf
EMD5DXV6T1,EMD5DXV6T5Preferred DevicesProduct PreviewDual Bias ResistorTransistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias (3) (2) (1)Resistor NetworkR1 R2Q1The BRT (Bias Resistor Transistor) contains a single transistor withQ2a monolithic bias network consisting of two resistors; a series baseR2 R1resistor and a base-emi
0.6. Size:147K chenmko
chemd5gp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHEMD5GPDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
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