EMD5 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMD5
SMD Transistor Code: D5
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SC-107C
EMD5 Transistor Equivalent Substitute - Cross-Reference Search
EMD5 Datasheet (PDF)
emd5 umd5n.pdf
EMD5 / UMD5NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R147kWEMD5 UMD5N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR14.7k
emd5 umd5n.pdf
EMD5 / UMD5N Transistors General purpose (dual digital transistors) EMD5 / UMD5N Features External dimensions (Unit : mm) 1) Both the DTA143X chip and DTC144E chip in an EMD5EMT6 or UMT6 package. ( ) ( )4 32) Mounting possible with EMT3 or UMT3 automatic ( ) ( )5 26 1mounting machines. ( ) ( )1.21.63) Transistor elements are independent, eliminating inter
emd59.pdf
EMD59DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R110kEMD59R2 (SC-107C)47k Parameter ValueVCC-50VIC(MAX.)-100mAR110kR247klFeatures lInner circuitl l
emd53.pdf
EMD53DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R110kEMD53R2 (SC-107C)10k Parameter ValueVCC-50VIC(MAX.)-100mAR110kR210klFeatures lInner circuitl l
emd52.pdf
EMD52DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R122kEMD52R2 (SC-107C)22k Parameter ValueVCC-50VIC(MAX.)-100mAR122kR222klFeatures lInner circuitl l
emd5dxv6 emd5dxv6t5g.pdf
EMD5DXV6T5GDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base R1 R2resistor and a base-emitter resistor. These digital transistors areQ1designed to r
emd5dxv6-d.pdf
EMD5DXV6T1,EMD5DXV6T5Preferred DevicesProduct PreviewDual Bias ResistorTransistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias (3) (2) (1)Resistor NetworkR1 R2Q1The BRT (Bias Resistor Transistor) contains a single transistor withQ2a monolithic bias network consisting of two resistors; a series baseR2 R1resistor and a base-emi
chemd5gp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHEMD5GPDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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