EMD5DXV6T5G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMD5DXV6T5G

Código: U5

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.357 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-563

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EMD5DXV6T5G datasheet

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EMD5DXV6T5G

EMD5DXV6T5G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network (3) (2) (1) The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digital transistors are Q1 designed to r

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EMD5DXV6T5G

EMD5DXV6T1, EMD5DXV6T5 Preferred Devices Product Preview Dual Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias (3) (2) (1) Resistor Network R1 R2 Q1 The BRT (Bias Resistor Transistor) contains a single transistor with Q2 a monolithic bias network consisting of two resistors; a series base R2 R1 resistor and a base-emi

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