EMD5DXV6T5G Datasheet, Equivalent, Cross Reference Search
Type Designator: EMD5DXV6T5G
SMD Transistor Code: U5
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.357
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-563
EMD5DXV6T5G Transistor Equivalent Substitute - Cross-Reference Search
EMD5DXV6T5G Datasheet (PDF)
emd5dxv6 emd5dxv6t5g.pdf
EMD5DXV6T5GDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base R1 R2resistor and a base-emitter resistor. These digital transistors areQ1designed to r
emd5dxv6-d.pdf
EMD5DXV6T1,EMD5DXV6T5Preferred DevicesProduct PreviewDual Bias ResistorTransistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias (3) (2) (1)Resistor NetworkR1 R2Q1The BRT (Bias Resistor Transistor) contains a single transistor withQ2a monolithic bias network consisting of two resistors; a series baseR2 R1resistor and a base-emi
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N918ACSM
