EMD6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: EMD6
   Código: D6
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-107C

Búsqueda de reemplazo de transistor bipolar EMD6

EMD6 Datasheet (PDF)

..1. Size:486K rohm
emd6.pdf

EMD6 / UMD6N / IMD6ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) VCEO50V(4) (4) (1) (1) IC (2) (2) 100mA(3) (3) R14.7kWEMD6 UMD6N (SC-107C) SOT-353 (SC-88) SMT6(4) (5) Parameter Value (6) (3) VCEO-50V (2) (1) IC

..2. Size:67K rohm
emd6 umd6n imd6a umd6n.pdf

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)automatic mounting machines. (6) (1)1.21.63) Transistor elements are independent, elimin

..3. Size:460K htsemi
emd6.pdf

EMD6DIGITAL TRANSISTOR (NPN+ PNP)FEATURES SOT-563 DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. 1 Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. External circuit MARKING:D6 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-emitter

0.1. Size:272K philips
pemd6 pumd6.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPEMD6; PUMD6NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Apr 07Supersedes data of 2003 Nov 04NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD6; PUMD6R1 = 4.7 k, R2 = openFEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see

0.2. Size:886K rohm
emd62.pdf

EMD62DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R147kEMD62R2 (SC-107C)47k Parameter ValueVCC-50VIC(MAX.)-100mAR147kR247klFeatures lInner circuitl l

0.3. Size:1274K rohm
emd6fha umd6nfha.pdf

EMD6 / UMD6N / IMD6AEMD6FHA / UMD6NFHA / IMD6AFRADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) VCEO50V(4) (4) (1) (1) IC (2) (2) 100mA(3) (3) R14.7kWEMD6FHA UMD6NFHAEMD6 UMD6N (SC-107C) SOT-353 (SC-88) SMT6

0.4. Size:1314K rohm
emd6fha umd6nfha imd6afra.pdf