EMD6 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMD6
SMD Transistor Code: D6
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107C
EMD6 Transistor Equivalent Substitute - Cross-Reference Search
EMD6 Datasheet (PDF)
emd6.pdf
EMD6 / UMD6N / IMD6ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) VCEO50V(4) (4) (1) (1) IC (2) (2) 100mA(3) (3) R14.7kWEMD6 UMD6N (SC-107C) SOT-353 (SC-88) SMT6(4) (5) Parameter Value (6) (3) VCEO-50V (2) (1) IC
emd6 umd6n imd6a umd6n.pdf
EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)automatic mounting machines. (6) (1)1.21.63) Transistor elements are independent, elimin
emd6.pdf
EMD6DIGITAL TRANSISTOR (NPN+ PNP)FEATURES SOT-563 DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. 1 Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. External circuit MARKING:D6 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-emitter
pemd6 pumd6.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD6; PUMD6NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Apr 07Supersedes data of 2003 Nov 04NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD6; PUMD6R1 = 4.7 k, R2 = openFEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see
emd62.pdf
EMD62DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT6VCC50VIC(MAX.)100mA R147kEMD62R2 (SC-107C)47k Parameter ValueVCC-50VIC(MAX.)-100mAR147kR247klFeatures lInner circuitl l
emd6fha umd6nfha.pdf
EMD6 / UMD6N / IMD6AEMD6FHA / UMD6NFHA / IMD6AFRADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) VCEO50V(4) (4) (1) (1) IC (2) (2) 100mA(3) (3) R14.7kWEMD6FHA UMD6NFHAEMD6 UMD6N (SC-107C) SOT-353 (SC-88) SMT6
emd6fha umd6nfha imd6afra.pdf
EMD6 / UMD6N / IMD6AEMD6FHA / UMD6NFHA / IMD6AFRADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) VCEO50V(4) (4) (1) (1) IC (2) (2) 100mA(3) (3) R14.7kWEMD6FHA UMD6NFHAEMD6 UMD6N (SC-107C) SOT-353 (SC-88) SMT6
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .