EMG2
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMG2
Código: G2
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC-107BB
Búsqueda de reemplazo de transistor bipolar EMG2
EMG2
Datasheet (PDF)
..1. Size:449K rohm
emg2.pdf
EMG2 / UMG2N / FMG2ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCC50V(1) (4) (1) (4) IC(MAX.)100mA (2) (3) (5) R147kWEMG2 UMG2N R2(SC-107BB) 47kW SOT-353 (SC-88A) SMT5(1) lFeatures(2) 1) Built-In Biasing Resistors, R1 = R2 = 47kW.(5) (4) 2) Tw
..2. Size:66K rohm
emg2 umg2n fmg2a umg2n.pdf
EMG2 / UMG2N / FMG2A Transistors Emitter common (dual digital transistors) EMG2 / UMG2N / FMG2A Features External dimensions (Unit : mm) 1) Two DTC144E chips in a EMT or UMT or SMT EMG2package. 2) Mounting cost and area can be cut in half. (4) (3) (2)(5) (1)1.21.6 Structure Dual NPN digital transistor Each lead has same dimensions(each with a single built i
0.1. Size:69K onsemi
emg2dxv5t1 emg5dxv5 emg2dxv5t5g emg5dxv5t1.pdf
EMG2DXV5T1,EMG5DXV5T1Preferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias net
0.2. Size:83K chenmko
chemg2gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMG2GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c
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