EMG2 Datasheet. Specs and Replacement

Type Designator: EMG2

SMD Transistor Code: G2

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SC-107BB

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EMG2 datasheet

 ..1. Size:449K  rohm

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EMG2

EMG2 / UMG2N / FMG2A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT5 UMT5 Parameter Tr1 and Tr2 (3) (5) (2) VCC 50V (1) (4) (1) (4) IC(MAX.) 100mA (2) (3) (5) R1 47kW EMG2 UMG2N R2 (SC-107BB) 47kW SOT-353 (SC-88A) SMT5 (1) lFeatures (2) 1) Built-In Biasing Resistors, R1 = R2 = 47kW. (5) (4) 2) Tw... See More ⇒

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EMG2 / UMG2N / FMG2A Transistors Emitter common (dual digital transistors) EMG2 / UMG2N / FMG2A Features External dimensions (Unit mm) 1) Two DTC144E chips in a EMT or UMT or SMT EMG2 package. 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Dual NPN digital transistor Each lead has same dimensions (each with a single built i... See More ⇒

 0.1. Size:69K  onsemi

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EMG2

EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias net... See More ⇒

 0.2. Size:83K  chenmko

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EMG2

CHENMKO ENTERPRISE CO.,LTD CHEMG2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current c... See More ⇒

Detailed specifications: EMD9, EMD9FHA, EMF18XV6, EMF18XV6T5, EMF18XV6T5G, EMF5XV6, EMF5XV6T5G, EMG1, 2SA1943, EMG2DXV5T5G, EMG3, EMG4, EMG5, EMG5DXV5T1, EMG6, EMG8, EMG9

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