EMG3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMG3
Código: G3
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-107BB
Búsqueda de reemplazo de transistor bipolar EMG3
EMG3 Datasheet (PDF)
emg3.pdf
EMG3 / UMG3N / FMG3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCEO (1) 50V (4) (1) (4) (2) IC(MAX.)100mA(3) (5) R14.7kWEMG3 UMG3N (SC-107BB) SOT-353 (SC-88A) SMT5(1) lFeatures(2) (5) 1) Built-In Biasing Resistors.(4) (3) 2) Two DTC143T chips in o
emg3 umg3n fmg3a umg3n.pdf
EMG3 / UMG3N / FMG3A Transistors Emitter common (dual digital transistors) EMG3 / UMG3N / FMG3A External dimensions (Unit : mm) Features 1) Two DTC143T chips in a EMT or UMT or SMT EMG3package. 2) Mounting cost and area can be cut in half. (4) (3)(2)(5) (1)1.2 1.6 Structure Dual NPN digital transistor Each lead has same dimensions(each with a single built
chemg3gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMG3GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
