EMG3 Datasheet. Specs and Replacement
Type Designator: EMG3
SMD Transistor Code: G3
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SC-107BB
EMG3 Substitution
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EMG3 datasheet
EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT5 UMT5 Parameter Tr1 and Tr2 (3) (5) (2) VCEO (1) 50V (4) (1) (4) (2) IC(MAX.) 100mA (3) (5) R1 4.7kW EMG3 UMG3N (SC-107BB) SOT-353 (SC-88A) SMT5 (1) lFeatures (2) (5) 1) Built-In Biasing Resistors. (4) (3) 2) Two DTC143T chips in o... See More ⇒
EMG3 / UMG3N / FMG3A Transistors Emitter common (dual digital transistors) EMG3 / UMG3N / FMG3A External dimensions (Unit mm) Features 1) Two DTC143T chips in a EMT or UMT or SMT EMG3 package. 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Dual NPN digital transistor Each lead has same dimensions (each with a single built... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHEMG3GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current ... See More ⇒
Detailed specifications: EMF18XV6, EMF18XV6T5, EMF18XV6T5G, EMF5XV6, EMF5XV6T5G, EMG1, EMG2, EMG2DXV5T5G, A1015, EMG4, EMG5, EMG5DXV5T1, EMG6, EMG8, EMG9, EMH1, EMH10
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