EMG3 Datasheet and Replacement
Type Designator: EMG3
SMD Transistor Code: G3
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107BB
EMG3 Substitution
EMG3 Datasheet (PDF)
emg3.pdf

EMG3 / UMG3N / FMG3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCEO (1) 50V (4) (1) (4) (2) IC(MAX.)100mA(3) (5) R14.7kWEMG3 UMG3N (SC-107BB) SOT-353 (SC-88A) SMT5(1) lFeatures(2) (5) 1) Built-In Biasing Resistors.(4) (3) 2) Two DTC143T chips in o
emg3 umg3n fmg3a umg3n.pdf

EMG3 / UMG3N / FMG3A Transistors Emitter common (dual digital transistors) EMG3 / UMG3N / FMG3A External dimensions (Unit : mm) Features 1) Two DTC143T chips in a EMT or UMT or SMT EMG3package. 2) Mounting cost and area can be cut in half. (4) (3)(2)(5) (1)1.2 1.6 Structure Dual NPN digital transistor Each lead has same dimensions(each with a single built
chemg3gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG3GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
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