EMG8 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: EMG8
   Código: G8
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SC-107BB

Búsqueda de reemplazo de transistor bipolar EMG8

EMG8 Datasheet (PDF)

..1. Size:67K rohm
emg8 umg8n fmg8a.pdf

EMG8 / UMG8N / FMG8ATransistorsEmitter common(dual digital transistors)EMG8 / UMG8N / FMG8A Features External dimensions (Units : mm)1) Two DTC143Z chips in a EMT or UMT or SMTEMG8package.2) Mounting cost and area can be cut in half.(4) (3)(2)(5) (1)1.21.6 StructureEach lead has same dimensionsEpitaxial planar typeROHM : EMT5NPN silicon transistorAbbrevia

..2. Size:413K rohm
emg8.pdf

EMG8 / UMG8NDatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCC (1) 50V(4) (1) (4) IC(MAX.) (2) 100mA(3) (5) R14.7kWEMG8 UMG8N R2(SC-107BB) 47kW SOT-353 (SC-88A) lFeatures lInner circuit1) Built-In Biasing Resistors.2) Two DTC143Z chips in one package.GND

..3. Size:649K htsemi
emg8.pdf

EMG8d u al d ig ital tran sisto rs ( NPN+ NPN)SOT-553 FEATURES Two DTC143Z chips in a package Mounting cost and area can be cut in half 1 Marking: G8 Equivalent circuit: Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage 50 VVi Input voltage -5~30 VIO Output current 100 mA PD Power dissipation 150 mW TJ Junction temperature 150

0.1. Size:139K chenmko
chemg8gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG8GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: HA7631

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050