EMG8 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMG8 / UMG8N / FMG8ATransistorsEmitter common(dual digital transistors)EMG8 / UMG8N / FMG8A Features External dimensions (Units : mm)1) Two DTC143Z chips in a EMT or UMT or SMTEMG8package.2) Mounting cost and area can be cut in half.(4) (3)(2)(5) (1)1.21.6 StructureEach lead has same dimensionsEpitaxial planar typeROHM : EMT5NPN silicon transistorAbbrevia

EMG8 / UMG8NDatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCC (1) 50V(4) (1) (4) IC(MAX.) (2) 100mA(3) (5) R14.7kWEMG8 UMG8N R2(SC-107BB) 47kW SOT-353 (SC-88A) lFeatures lInner circuit1) Built-In Biasing Resistors.2) Two DTC143Z chips in one package.GND

EMG8d u al d ig ital tran sisto rs ( NPN+ NPN)SOT-553 FEATURES Two DTC143Z chips in a package Mounting cost and area can be cut in half 1 Marking: G8 Equivalent circuit: Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage 50 VVi Input voltage -5~30 VIO Output current 100 mA PD Power dissipation 150 mW TJ Junction temperature 150

CHENMKO ENTERPRISE CO.,LTDCHEMG8GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c