EMG8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMG8

Código: G8

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: SC-107BB

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EMG8 datasheet

..1. Size:67K rohm
emg8 umg8n fmg8a.pdf pdf_icon

EMG8 / UMG8N / FMG8A Transistors Emitter common (dual digital transistors) EMG8 / UMG8N / FMG8A Features External dimensions (Units mm) 1) Two DTC143Z chips in a EMT or UMT or SMT EMG8 package. 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Each lead has same dimensions Epitaxial planar type ROHM EMT5 NPN silicon transistor Abbrevia

..2. Size:413K rohm
emg8.pdf pdf_icon

EMG8 / UMG8N Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT5 UMT5 Parameter Tr1 and Tr2 (3) (5) (2) VCC (1) 50V (4) (1) (4) IC(MAX.) (2) 100mA (3) (5) R1 4.7kW EMG8 UMG8N R2 (SC-107BB) 47kW SOT-353 (SC-88A) lFeatures lInner circuit 1) Built-In Biasing Resistors. 2) Two DTC143Z chips in one package. GND

..3. Size:649K htsemi
emg8.pdf pdf_icon

EMG8 d u al d ig ital tran sisto rs ( NPN+ NPN) SOT-553 FEATURES Two DTC143Z chips in a package Mounting cost and area can be cut in half 1 Marking G8 Equivalent circuit Absolute maximum ratings (Ta=25 ) Symbol Parameter Value Units VCC Supply Voltage 50 V Vi Input voltage -5 30 V IO Output current 100 mA PD Power dissipation 150 mW TJ Junction temperature 150

0.1. Size:139K chenmko
chemg8gp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHEMG8GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current c

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EMG8 Datasheet. Equivalente