EMG8 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMG8
SMD Transistor Code: G8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC-107BB
EMG8 Transistor Equivalent Substitute - Cross-Reference Search
EMG8 Datasheet (PDF)
emg8 umg8n fmg8a.pdf
EMG8 / UMG8N / FMG8ATransistorsEmitter common(dual digital transistors)EMG8 / UMG8N / FMG8A Features External dimensions (Units : mm)1) Two DTC143Z chips in a EMT or UMT or SMTEMG8package.2) Mounting cost and area can be cut in half.(4) (3)(2)(5) (1)1.21.6 StructureEach lead has same dimensionsEpitaxial planar typeROHM : EMT5NPN silicon transistorAbbrevia
emg8.pdf
EMG8 / UMG8NDatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCC (1) 50V(4) (1) (4) IC(MAX.) (2) 100mA(3) (5) R14.7kWEMG8 UMG8N R2(SC-107BB) 47kW SOT-353 (SC-88A) lFeatures lInner circuit1) Built-In Biasing Resistors.2) Two DTC143Z chips in one package.GND
emg8.pdf
EMG8d u al d ig ital tran sisto rs ( NPN+ NPN)SOT-553 FEATURES Two DTC143Z chips in a package Mounting cost and area can be cut in half 1 Marking: G8 Equivalent circuit: Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage 50 VVi Input voltage -5~30 VIO Output current 100 mA PD Power dissipation 150 mW TJ Junction temperature 150
chemg8gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMG8GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA212 | 2SB370 | 2PB602AR | PBHV9040X
History: 2SA212 | 2SB370 | 2PB602AR | PBHV9040X
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