EMG9 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMG9
Código: G9
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: SC-107BB
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EMG9 datasheet
emg9.pdf
EMG9 / UMG9N / FMG9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT5 UMT5 Parameter Tr1 and Tr2 (3) (5) (2) (1) (4) VCC 50V (1) (4) (2) IC(MAX.) 100mA (3) (5) R1 10kW EMG9 UMG9N R2 (SC-107BB) 10kW SOT-353 (SC-88A) SMT5 (1) lFeatures (2) 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (5) (4) (3)
emg9 umg9n fmg9a umg9n.pdf
EMG9 / UMG9N / FMG9A Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A Features External dimensions (Unit mm) 1) Two DTC114E in a EMT or UMT or SMT package. EMG9 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensions ROHM EMT5 (Built
chemg9gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHEMG9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current
Otros transistores... EMG2, EMG2DXV5T5G, EMG3, EMG4, EMG5, EMG5DXV5T1, EMG6, EMG8, TIP42C, EMH1, EMH10, EMH10FHA, EMH11, EMH11FHA, EMH15, EMH15FHA, EMH1FHA
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