EMG9 Datasheet and Replacement
Type Designator: EMG9
SMD Transistor Code: G9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC-107BB
EMG9 Substitution
EMG9 Datasheet (PDF)
emg9.pdf

EMG9 / UMG9N / FMG9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) (1) (4) VCC50V(1) (4) (2) IC(MAX.)100mA(3) (5) R110kWEMG9 UMG9N R2(SC-107BB) 10kW SOT-353 (SC-88A) SMT5(1) lFeatures(2) 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (5) (4) (3)
emg9 umg9n fmg9a umg9n.pdf

EMG9 / UMG9N / FMG9A Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A Features External dimensions (Unit : mm) 1) Two DTC114E in a EMT or UMT or SMT package. EMG92) Mounting cost and area can be cut in half. (4) (3)(2)(5) (1)1.21.6 Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensionsROHM : EMT5(Built
chemg9gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG9GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: ECG99 | ECG52 | ED1501E
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History: ECG99 | ECG52 | ED1501E



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