EMG9 Datasheet. Specs and Replacement
Type Designator: EMG9
SMD Transistor Code: G9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SC-107BB
EMG9 Substitution
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EMG9 datasheet
EMG9 / UMG9N / FMG9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT5 UMT5 Parameter Tr1 and Tr2 (3) (5) (2) (1) (4) VCC 50V (1) (4) (2) IC(MAX.) 100mA (3) (5) R1 10kW EMG9 UMG9N R2 (SC-107BB) 10kW SOT-353 (SC-88A) SMT5 (1) lFeatures (2) 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (5) (4) (3) ... See More ⇒
EMG9 / UMG9N / FMG9A Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A Features External dimensions (Unit mm) 1) Two DTC114E in a EMT or UMT or SMT package. EMG9 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensions ROHM EMT5 (Built... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHEMG9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current ... See More ⇒
Detailed specifications: EMG2, EMG2DXV5T5G, EMG3, EMG4, EMG5, EMG5DXV5T1, EMG6, EMG8, TIP42C, EMH1, EMH10, EMH10FHA, EMH11, EMH11FHA, EMH15, EMH15FHA, EMH1FHA
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