EMH1 Todos los transistores

EMH1 / UMH1N / IMH1A Transistors General purpose (dual digital transistors) EMH1 / UMH1N / IMH1A External dimensions (Unit mm) Features 1) Two DTC124E chips in a EMT or UMT or SMT UMH1N package. 1.25 Circuit schematic 2.1 EMH1 / UMH1N IMH1A (3) (2) (1) (4) (5) (6) 0.1Min. R1 R2 R1 R2 ROHM UMT6 Each lead has same dimensions EIAJ SC-88 R2 R2 R1 R1 (4) (5) (6)

EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 22kW EMH1 UMH1N R2 (SC-107C) 22kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1 = R2

EMH1 (dual digital transistors) SOT-563 FEATURES Two DTC124E chips in a package. 1 MARKING H1 Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 30 Output current mA IC(MAX) 100 Power dissipation PD 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 150 Electrical characteristi

DISCRETE SEMICONDUCTORS DATA SHEET PEMH10; PUMH10 NPN/NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Product data sheet 2003 Oct 20 Supersedes data of 2001 Oct 22 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH10; PUMH10 R1 = 2.2 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX.

DISCRETE SEMICONDUCTORS DATA SHEET PEMH1; PUMH1 NPN/NPN resistor-equipped transistors; R1 = 22 k , R2 = 22 k Product data sheet 2003 Oct 08 Supersedes data of 2001 Oct 22 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH1; PUMH1 R1 = 22 k , R2 = 22 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEET PEMH11; PUMH11 NPN/NPN resistor-equipped transistors; R1 = 10 k , R2 = 10 k Product data sheet 2003 Oct 20 Supersedes data of 2001 Oct 22 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH11; PUMH11 R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. U

DISCRETE SEMICONDUCTORS DATA SHEET PEMH13; PUMH13 NPN/NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 47 k Product data sheet 2004 Apr 14 Supersedes data of 2003 Nov 07 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH13; PUMH13 R1 = 4.7 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX

EMH1405 Ordering number ENA1667 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH1405 Applications Features ON-resistance RDS(on)1=14m (typ) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source

Ordering number ENA0661 EMH1303 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device EMH1303 Applications Features Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --

EMH1307 Ordering number ENA1715 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device EMH1307 Applications Features ON-resistance RDS(on)1 20m (typ.) Input Capacitance Ciss=1100pF(typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Dr

PEMH15; PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 4.7 k Rev. 5 16 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP Package complement complement configuration NXP

PEMH16; PUMH16 NPN/NPN resistor-equipped transistors; R1 = 22 k , R2 = 47 k Rev. 04 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH16 SOT666 - PEMD16 PEMB16 PUMH16 SOT363 SC-88 PUMD16 PUMB16 1.2 Featu

PEMH19; PUMH19 NPN/NPN resistor-equipped transistors; R1 = 22 k , R2 = open Rev. 03 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH19 SOT666 - PEMD19 PEMB19 PUMH19 SOT363 SC-88 PUMD19 PUMB19 1.2 Feature

PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 10 k Rev. 4 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP Package complement complement configuration NXP J

PEMH17; PUMH17 NPN/NPN resistor-equipped transistors; R1 = 47 k , R2 = 22 k Rev. 03 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH17 SOT666 - PEMD17 PEMB17 PUMH17 SOT363 SC-88 PUMD17 PUMB17 1.2 Featu

PEMH14; PUMH14 NPN/NPN resistor-equipped transistors; R1 = 47 k , R2 = open Rev. 03 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH14 SOT666 - PEMD14 PEMB14 PUMH14 SOT363 SC-88 PUMD14 PUMB14 1.2 Feature

AEC-Q101 Qualified General purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHA Structure Dimensions (Unit mm) Epitaxial planar type NPN silicon transistor EMH10FHA EMH10 (Built-in resistor type) (4) (3) (5) (2) (6) (1) Features 1.2 1.6 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) (6) (1) automatic mounting machines. 1.2 1.6 3) Transistor elements are independent, eliminating interf

General purpose (dual digital transistors) EMH10 / UMH10N Structure Dimensions (Unit mm) Epitaxial planar type NPN silicon transistor EMH10 (Built-in resistor type) (4) (3) (5) (2) (6) (1) Features 1.2 1.6 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eli

EMH1FHA / UMH1NFHA / IMH1AFRA EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 22kW EMH1 UMH1N EMH1FHA UMH1NFHA R2 (SC-107C) 22kW SOT-353 (SC-88) SMT6 (

EMH11 / UMH11N / IMH11A EMH11FHA / UMH11NFHA / IMH11AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N EMH11FHA UMH11NFHA R2 10kW (SC-107C) SOT-353 (SC-88)

EMH15 / IMH15A EMH15FHA / IMH15AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A EMH15FHA IMH15AFRA (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit

EMH15 / IMH15A EMH15FHA / IMH15AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A EMH15FHA IMH15AFRA (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit

EMH11 / UMH11N / IMH11A EMH11FHA / UMH11NFHA / IMH11AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N EMH11FHA UMH11NFHA R2 10kW (SC-107C) SOT-353 (SC-88)

EMH1FHA / UMH1NFHA / IMH1AFRA EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 22kW EMH1 UMH1N EMH1FHA UMH1NFHA R2 (SC-107C) 22kW SOT-353 (SC-88) SMT6 (

EMH15 / IMH15A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Biasing Resistors. EMH15 IMH15A 2) Two DTC14

EMH15 / IMH15A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Biasing Resistors. EMH15 IMH15A 2) Two DTC14

EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N R2 (SC-107C) 10kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1

EMH10 General purpose transistors (dual transistors) SOT-563 FEATURES Two DTC123J chips in a package Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. 1 Mounting cost and area be cut in half. Marking H10 Equivalent circuit Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Supply

CHENMKO ENTERPRISE CO.,LTD CHEMH1GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabilit

CHENMKO ENTERPRISE CO.,LTD CHEMH11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

CHENMKO ENTERPRISE CO.,LTD CHEMH10GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil