EMH1 datasheet, аналоги, основные параметры
Наименование производителя: EMH1
Маркировка: H1
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 56
Корпус транзистора: SC-107C
Аналоги (замена) для EMH1
- подборⓘ биполярного транзистора по параметрам
EMH1 даташит
..1. Size:65K rohm
emh1 umh1n imh1a.pdf 
EMH1 / UMH1N / IMH1A Transistors General purpose (dual digital transistors) EMH1 / UMH1N / IMH1A External dimensions (Unit mm) Features 1) Two DTC124E chips in a EMT or UMT or SMT UMH1N package. 1.25 Circuit schematic 2.1 EMH1 / UMH1N IMH1A (3) (2) (1) (4) (5) (6) 0.1Min. R1 R2 R1 R2 ROHM UMT6 Each lead has same dimensions EIAJ SC-88 R2 R2 R1 R1 (4) (5) (6)
..2. Size:461K rohm
emh1.pdf 
EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 22kW EMH1 UMH1N R2 (SC-107C) 22kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1 = R2
..3. Size:403K htsemi
emh1.pdf 
EMH1 (dual digital transistors) SOT-563 FEATURES Two DTC124E chips in a package. 1 MARKING H1 Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 30 Output current mA IC(MAX) 100 Power dissipation PD 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 150 Electrical characteristi
0.1. Size:137K philips
pemh10 pumh10.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PEMH10; PUMH10 NPN/NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Product data sheet 2003 Oct 20 Supersedes data of 2001 Oct 22 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH10; PUMH10 R1 = 2.2 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX.
0.2. Size:136K philips
pemh1 pumh1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PEMH1; PUMH1 NPN/NPN resistor-equipped transistors; R1 = 22 k , R2 = 22 k Product data sheet 2003 Oct 08 Supersedes data of 2001 Oct 22 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH1; PUMH1 R1 = 22 k , R2 = 22 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
0.3. Size:137K philips
pemh11 pumh11.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PEMH11; PUMH11 NPN/NPN resistor-equipped transistors; R1 = 10 k , R2 = 10 k Product data sheet 2003 Oct 20 Supersedes data of 2001 Oct 22 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH11; PUMH11 R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. U
0.4. Size:138K philips
pemh13 pumh13.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PEMH13; PUMH13 NPN/NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 47 k Product data sheet 2004 Apr 14 Supersedes data of 2003 Nov 07 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH13; PUMH13 R1 = 4.7 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX
0.5. Size:347K sanyo
emh1405.pdf 
EMH1405 Ordering number ENA1667 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH1405 Applications Features ON-resistance RDS(on)1=14m (typ) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source
0.6. Size:65K sanyo
emh1303.pdf 
Ordering number ENA0661 EMH1303 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device EMH1303 Applications Features Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --
0.7. Size:344K sanyo
emh1307.pdf 
EMH1307 Ordering number ENA1715 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device EMH1307 Applications Features ON-resistance RDS(on)1 20m (typ.) Input Capacitance Ciss=1100pF(typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Dr
0.8. Size:612K nxp
pemh15 pumh15.pdf 
PEMH15; PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 4.7 k Rev. 5 16 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP Package complement complement configuration NXP
0.9. Size:261K nxp
pemh16 pumh16.pdf 
PEMH16; PUMH16 NPN/NPN resistor-equipped transistors; R1 = 22 k , R2 = 47 k Rev. 04 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH16 SOT666 - PEMD16 PEMB16 PUMH16 SOT363 SC-88 PUMD16 PUMB16 1.2 Featu
0.10. Size:237K nxp
pemh19 pumh19.pdf 
PEMH19; PUMH19 NPN/NPN resistor-equipped transistors; R1 = 22 k , R2 = open Rev. 03 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH19 SOT666 - PEMD19 PEMB19 PUMH19 SOT363 SC-88 PUMD19 PUMB19 1.2 Feature
0.11. Size:605K nxp
pemh18 pumh18.pdf 
PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 10 k Rev. 4 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP Package complement complement configuration NXP J
0.12. Size:258K nxp
pemh17 pumh17.pdf 
PEMH17; PUMH17 NPN/NPN resistor-equipped transistors; R1 = 47 k , R2 = 22 k Rev. 03 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH17 SOT666 - PEMD17 PEMB17 PUMH17 SOT363 SC-88 PUMD17 PUMB17 1.2 Featu
0.13. Size:93K nxp
pemh14 pumh14.pdf 
PEMH14; PUMH14 NPN/NPN resistor-equipped transistors; R1 = 47 k , R2 = open Rev. 03 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH14 SOT666 - PEMD14 PEMB14 PUMH14 SOT363 SC-88 PUMD14 PUMB14 1.2 Feature
0.14. Size:1017K rohm
emh10fha umh10nfha.pdf 
AEC-Q101 Qualified General purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHA Structure Dimensions (Unit mm) Epitaxial planar type NPN silicon transistor EMH10FHA EMH10 (Built-in resistor type) (4) (3) (5) (2) (6) (1) Features 1.2 1.6 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi
0.15. Size:69K rohm
emh11 umh11n imh11a.pdf 
EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) (6) (1) automatic mounting machines. 1.2 1.6 3) Transistor elements are independent, eliminating interf
0.16. Size:112K rohm
emh10.pdf 
General purpose (dual digital transistors) EMH10 / UMH10N Structure Dimensions (Unit mm) Epitaxial planar type NPN silicon transistor EMH10 (Built-in resistor type) (4) (3) (5) (2) (6) (1) Features 1.2 1.6 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eli
0.17. Size:1293K rohm
emh1fha umh1nfha.pdf 
EMH1FHA / UMH1NFHA / IMH1AFRA EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 22kW EMH1 UMH1N EMH1FHA UMH1NFHA R2 (SC-107C) 22kW SOT-353 (SC-88) SMT6 (
0.18. Size:1292K rohm
emh11fha umh11nfha.pdf 
EMH11 / UMH11N / IMH11A EMH11FHA / UMH11NFHA / IMH11AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N EMH11FHA UMH11NFHA R2 10kW (SC-107C) SOT-353 (SC-88)
0.19. Size:1172K rohm
emh15fha.pdf 
EMH15 / IMH15A EMH15FHA / IMH15AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A EMH15FHA IMH15AFRA (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit
0.20. Size:1208K rohm
emh15fha imh15afra.pdf 
EMH15 / IMH15A EMH15FHA / IMH15AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A EMH15FHA IMH15AFRA (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit
0.21. Size:1336K rohm
emh11fha umh11nfha imh11afra.pdf 
EMH11 / UMH11N / IMH11A EMH11FHA / UMH11NFHA / IMH11AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N EMH11FHA UMH11NFHA R2 10kW (SC-107C) SOT-353 (SC-88)
0.22. Size:1337K rohm
emh1fha umh1nfha imh1afra.pdf 
EMH1FHA / UMH1NFHA / IMH1AFRA EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 22kW EMH1 UMH1N EMH1FHA UMH1NFHA R2 (SC-107C) 22kW SOT-353 (SC-88) SMT6 (
0.23. Size:372K rohm
emh15.pdf 
EMH15 / IMH15A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Biasing Resistors. EMH15 IMH15A 2) Two DTC14
0.24. Size:445K rohm
emh15 imh15a.pdf 
EMH15 / IMH15A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) VCEO 50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R1 47kW EMH15 IMH15A (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Biasing Resistors. EMH15 IMH15A 2) Two DTC14
0.25. Size:447K rohm
emh11.pdf 
EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N R2 (SC-107C) 10kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1
0.26. Size:386K htsemi
emh10.pdf 
EMH10 General purpose transistors (dual transistors) SOT-563 FEATURES Two DTC123J chips in a package Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. 1 Mounting cost and area be cut in half. Marking H10 Equivalent circuit Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Supply
0.27. Size:80K chenmko
chemh1gp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHEMH1GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabilit
0.28. Size:87K chenmko
chemh11gp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHEMH11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
0.29. Size:128K chenmko
chemh10gp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHEMH10GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
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