EMH1 / UMH1N / IMH1A Transistors General purpose (dual digital transistors) EMH1 / UMH1N / IMH1A External dimensions (Unit : mm) Features 1) Two DTC124E chips in a EMT or UMT or SMT UMH1N package. 1.25 Circuit schematic 2.1EMH1 / UMH1N IMH1A(3) (2) (1) (4) (5) (6) 0.1Min.R1 R2 R1 R2ROHM : UMT6 Each lead has same dimensionsEIAJ : SC-88R2 R2R1 R1(4) (5) (6)

EMH1 / UMH1N / IMH1ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R122kWEMH1 UMH1N R2(SC-107C) 22kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1 = R2

EMH1 (dual digital transistors) SOT-563 FEATURES Two DTC124E chips in a package. 1 MARKING: H1 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply voltage VCC 50 VInput voltage VIN -10~40 VIO 30Output current mA IC(MAX) 100Power dissipation PD 150 mWJunction temperature Tj 150 Storage temperature Tstg -55~150 Electrical characteristi

DISCRETE SEMICONDUCTORS DATA SHEETPEMH10; PUMH10NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH10; PUMH10R1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX.

DISCRETE SEMICONDUCTORS DATA SHEETPEMH1; PUMH1NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH1; PUMH1R1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEETPEMH11; PUMH11NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH11; PUMH11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

DISCRETE SEMICONDUCTORS DATA SHEETPEMH13; PUMH13NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Nov 07 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH13; PUMH13R1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX

EMH1405Ordering number : ENA1667SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1405ApplicationsFeatures ON-resistance RDS(on)1=14m (typ) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source

Ordering number : ENA0661EMH1303SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1303ApplicationsFeatures Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --

EMH1307Ordering number : ENA1715SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1307ApplicationsFeatures ON-resistance RDS(on)1 : 20m (typ.) Input Capacitance Ciss=1100pF(typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDr

PEMH15; PUMH15NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 4.7 kRev. 5 16 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP

PEMH16; PUMH16NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 04 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH16 SOT666 - PEMD16 PEMB16PUMH16 SOT363 SC-88 PUMD16 PUMB161.2 Featu

PEMH19; PUMH19NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = openRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH19 SOT666 - PEMD19 PEMB19PUMH19 SOT363 SC-88 PUMD19 PUMB191.2 Feature

PEMH18; PUMH18NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 10 kRev. 4 19 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP J

PEMH17; PUMH17NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH17 SOT666 - PEMD17 PEMB17PUMH17 SOT363 SC-88 PUMD17 PUMB171.2 Featu

PEMH14; PUMH14NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = openRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH14 SOT666 - PEMD14 PEMB14PUMH14 SOT363 SC-88 PUMD14 PUMB141.2 Feature

AEC-Q101 QualifiedGeneral purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHAStructure Dimensions (Unit : mm)Epitaxial planar type NPN silicon transistor EMH10FHAEMH10(Built-in resistor type)(4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit : mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)(6) (1)automatic mounting machines. 1.21.63) Transistor elements are independent, eliminating interf

General purpose (dual digital transistors) EMH10 / UMH10N Structure Dimensions (Unit : mm) Epitaxial planar type NPN silicon transistor EMH10(Built-in resistor type) (4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eli

EMH1FHA / UMH1NFHA / IMH1AFRAEMH1 / UMH1N / IMH1ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R122kWEMH1 UMH1NEMH1FHA UMH1NFHAR2(SC-107C) 22kW SOT-353 (SC-88) SMT6(

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

EMH15 / IMH15AEMH15FHA / IMH15AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) VCEO50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R147kWEMH15 IMH15A EMH15FHA IMH15AFRA(SC-107C) SOT-457 (SC-74) lFeatures lInner circuit

EMH15 / IMH15AEMH15FHA / IMH15AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) VCEO50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R147kWEMH15 IMH15A EMH15FHA IMH15AFRA(SC-107C) SOT-457 (SC-74) lFeatures lInner circuit

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

EMH1FHA / UMH1NFHA / IMH1AFRAEMH1 / UMH1N / IMH1ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R122kWEMH1 UMH1NEMH1FHA UMH1NFHAR2(SC-107C) 22kW SOT-353 (SC-88) SMT6(

EMH15 / IMH15ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) VCEO50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R147kWEMH15 IMH15A (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit1) Built-In Biasing Resistors.EMH15 IMH15A 2) Two DTC14

EMH15 / IMH15ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) VCEO50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R147kWEMH15 IMH15A (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit1) Built-In Biasing Resistors.EMH15 IMH15A 2) Two DTC14

EMH11 / UMH11N / IMH11ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N R2(SC-107C) 10kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1

EMH10 General purpose transistors (dual transistors)SOT-563 FEATURES Two DTC123J chips in a package Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. 1 Mounting cost and area be cut in half. Marking: H10 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply

CHENMKO ENTERPRISE CO.,LTDCHEMH1GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit

CHENMKO ENTERPRISE CO.,LTDCHEMH11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

CHENMKO ENTERPRISE CO.,LTDCHEMH10GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil