EMH1 Datasheet and Replacement

   Type Designator: EMH1
   SMD Transistor Code: H1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SC-107C

EMH1 Substitution

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EMH1 Datasheet (PDF)

..1. Size:65K rohm
emh1 umh1n imh1a.pdf pdf_icon

EMH1 / UMH1N / IMH1A Transistors General purpose (dual digital transistors) EMH1 / UMH1N / IMH1A External dimensions (Unit : mm) Features 1) Two DTC124E chips in a EMT or UMT or SMT UMH1N package. 1.25 Circuit schematic 2.1EMH1 / UMH1N IMH1A(3) (2) (1) (4) (5) (6) 0.1Min.R1 R2 R1 R2ROHM : UMT6 Each lead has same dimensionsEIAJ : SC-88R2 R2R1 R1(4) (5) (6)

..2. Size:461K rohm
emh1.pdf pdf_icon

EMH1 / UMH1N / IMH1ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R122kWEMH1 UMH1N R2(SC-107C) 22kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1 = R2

..3. Size:403K htsemi
emh1.pdf pdf_icon

EMH1 (dual digital transistors) SOT-563 FEATURES Two DTC124E chips in a package. 1 MARKING: H1 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply voltage VCC 50 VInput voltage VIN -10~40 VIO 30Output current mA IC(MAX) 100Power dissipation PD 150 mWJunction temperature Tj 150 Storage temperature Tstg -55~150 Electrical characteristi

0.1. Size:137K philips
pemh10 pumh10.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEETPEMH10; PUMH10NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH10; PUMH10R1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX.

0.2. Size:136K philips
pemh1 pumh1.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEETPEMH1; PUMH1NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH1; PUMH1R1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

0.3. Size:137K philips
pemh11 pumh11.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEETPEMH11; PUMH11NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH11; PUMH11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

0.4. Size:138K philips
pemh13 pumh13.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEETPEMH13; PUMH13NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Nov 07 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH13; PUMH13R1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX

0.5. Size:347K sanyo
emh1405.pdf pdf_icon

EMH1405Ordering number : ENA1667SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1405ApplicationsFeatures ON-resistance RDS(on)1=14m (typ) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source

0.6. Size:65K sanyo
emh1303.pdf pdf_icon

Ordering number : ENA0661EMH1303SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1303ApplicationsFeatures Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --

0.7. Size:344K sanyo
emh1307.pdf pdf_icon

EMH1307Ordering number : ENA1715SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1307ApplicationsFeatures ON-resistance RDS(on)1 : 20m (typ.) Input Capacitance Ciss=1100pF(typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDr

0.8. Size:612K nxp
pemh15 pumh15.pdf pdf_icon

PEMH15; PUMH15NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 4.7 kRev. 5 16 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP

0.9. Size:261K nxp
pemh16 pumh16.pdf pdf_icon

PEMH16; PUMH16NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 04 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH16 SOT666 - PEMD16 PEMB16PUMH16 SOT363 SC-88 PUMD16 PUMB161.2 Featu

0.10. Size:237K nxp
pemh19 pumh19.pdf pdf_icon

PEMH19; PUMH19NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = openRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH19 SOT666 - PEMD19 PEMB19PUMH19 SOT363 SC-88 PUMD19 PUMB191.2 Feature

0.11. Size:605K nxp
pemh18 pumh18.pdf pdf_icon

PEMH18; PUMH18NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 10 kRev. 4 19 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP J

0.12. Size:258K nxp
pemh17 pumh17.pdf pdf_icon

PEMH17; PUMH17NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH17 SOT666 - PEMD17 PEMB17PUMH17 SOT363 SC-88 PUMD17 PUMB171.2 Featu

0.13. Size:93K nxp
pemh14 pumh14.pdf pdf_icon

PEMH14; PUMH14NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = openRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH14 SOT666 - PEMD14 PEMB14PUMH14 SOT363 SC-88 PUMD14 PUMB141.2 Feature

0.14. Size:1017K rohm
emh10fha umh10nfha.pdf pdf_icon

AEC-Q101 QualifiedGeneral purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHAStructure Dimensions (Unit : mm)Epitaxial planar type NPN silicon transistor EMH10FHAEMH10(Built-in resistor type)(4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi

0.15. Size:69K rohm
emh11 umh11n imh11a.pdf pdf_icon

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit : mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)(6) (1)automatic mounting machines. 1.21.63) Transistor elements are independent, eliminating interf

0.16. Size:112K rohm
emh10.pdf pdf_icon

General purpose (dual digital transistors) EMH10 / UMH10N Structure Dimensions (Unit : mm) Epitaxial planar type NPN silicon transistor EMH10(Built-in resistor type) (4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eli

0.17. Size:1293K rohm
emh1fha umh1nfha.pdf pdf_icon

EMH1FHA / UMH1NFHA / IMH1AFRAEMH1 / UMH1N / IMH1ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R122kWEMH1 UMH1NEMH1FHA UMH1NFHAR2(SC-107C) 22kW SOT-353 (SC-88) SMT6(

0.18. Size:1292K rohm
emh11fha umh11nfha.pdf pdf_icon

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

0.19. Size:1172K rohm
emh15fha.pdf pdf_icon

EMH15 / IMH15AEMH15FHA / IMH15AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) VCEO50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R147kWEMH15 IMH15A EMH15FHA IMH15AFRA(SC-107C) SOT-457 (SC-74) lFeatures lInner circuit

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emh15.pdf pdf_icon

EMH15 / IMH15ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) VCEO50V (6) (4) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R147kWEMH15 IMH15A (SC-107C) SOT-457 (SC-74) lFeatures lInner circuit1) Built-In Biasing Resistors.EMH15 IMH15A 2) Two DTC14

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emh11.pdf pdf_icon

EMH11 / UMH11N / IMH11ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N R2(SC-107C) 10kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1

0.26. Size:386K htsemi
emh10.pdf pdf_icon

EMH10 General purpose transistors (dual transistors)SOT-563 FEATURES Two DTC123J chips in a package Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. 1 Mounting cost and area be cut in half. Marking: H10 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply

0.27. Size:80K chenmko
chemh1gp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTDCHEMH1GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit

0.28. Size:87K chenmko
chemh11gp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTDCHEMH11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

0.29. Size:128K chenmko
chemh10gp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTDCHEMH10GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .