EMH3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMH3
Código: H3
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-107C
Búsqueda de reemplazo de transistor bipolar EMH3
EMH3 Datasheet (PDF)
emh3.pdf
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EMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N (SC-107C) SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors.(3) (2) 2)
emh3 umh3n imh3a umh3n.pdf
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EMH3 / UMH3N / IMH3A Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A External dimensions (Unit : mm) Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT EMH3package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)automatic mounting machines. (6) (1)1.21.63) Transistor elements are independent, eliminating interferen
emh3.pdf
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EMH3 DIGITAL TRANSISTOR (NPN+ NPN)SOT-563 FEATURES Two DTC143T chips in a UMT package Transistor elements are independent, eliminating interference 1 Mounting cost and area can be cut in half. External circuit MARKING:H3 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-emitter voltage V(BR)CEO 50 VEmit
pemh30 pumh30.pdf
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PEMH30; PUMH30NPN/NPN double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 01 28 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH30 SOT66
emh3fha umh3nfha imh3afra.pdf
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EMH3FHA / UMH3NFHA / IMH3AFRAEMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N EMH3FHA UMH3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4) (5
emh3fha umh3nfha.pdf
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EMH3FHA / UMH3NFHA / IMH3AFRAEMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N EMH3FHA UMH3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4) (5
chemh3gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHEMH3GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: DMG96404 | DMG964H1
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