EMH3 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMH3
SMD Transistor Code: H3
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107C
EMH3 Transistor Equivalent Substitute - Cross-Reference Search
EMH3 Datasheet (PDF)
emh3.pdf
EMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N (SC-107C) SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors.(3) (2) 2)
emh3 umh3n imh3a umh3n.pdf
EMH3 / UMH3N / IMH3A Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A External dimensions (Unit : mm) Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT EMH3package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)automatic mounting machines. (6) (1)1.21.63) Transistor elements are independent, eliminating interferen
emh3.pdf
EMH3 DIGITAL TRANSISTOR (NPN+ NPN)SOT-563 FEATURES Two DTC143T chips in a UMT package Transistor elements are independent, eliminating interference 1 Mounting cost and area can be cut in half. External circuit MARKING:H3 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-emitter voltage V(BR)CEO 50 VEmit
pemh30 pumh30.pdf
PEMH30; PUMH30NPN/NPN double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 01 28 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH30 SOT66
emh3fha umh3nfha imh3afra.pdf
EMH3FHA / UMH3NFHA / IMH3AFRAEMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N EMH3FHA UMH3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4) (5
emh3fha umh3nfha.pdf
EMH3FHA / UMH3NFHA / IMH3AFRAEMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N EMH3FHA UMH3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4) (5
chemh3gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMH3GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N2564 | DMA26103 | KRA759U | 2SB688R | 2SC811 | KT6128V | 2SC978
History: 2N2564 | DMA26103 | KRA759U | 2SB688R | 2SC811 | KT6128V | 2SC978
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