EMH9 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMH9

Código: H9

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.07 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 68

Encapsulados: SC-107C

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EMH9 datasheet

 ..1. Size:458K  rohm
 emh9.pdf pdf_icon

EMH9

EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC 50V (4) (4) (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 10kW EMH9 UMH9N R2 (SC-107C) 47kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) (3) 1) Built-In Biasing Resistor

 ..2. Size:67K  rohm
 emh9 umh9n imh9a umh9n.pdf pdf_icon

EMH9

EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A External dimensions (Unit mm) Features 1) Two DTC114Ys chips in a EMT or UMT or SMT EMH9 package. (4) (3) 2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2) (6) (1) 1.2 automatic mounting machines. 1.6 3) Transistor elements are independent, eliminating interferen

 ..3. Size:541K  htsemi
 emh9.pdf pdf_icon

EMH9

EMH9 digital transistor (NPN+ NPN) SOT-563 FEATURES Two DTC114Ys chips in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING H9 Absolute maximum ratings(Ta=25 ) Parameter Symbol Unit Limits Supply voltage VCC 50 V Input voltage VIN -6 40 V IO 70 Output current mA IC

 0.1. Size:151K  philips
 pimh9 pumh9 pemh9.pdf pdf_icon

EMH9

DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 k , R2 = 47 k Product data sheet 2004 Apr 14 Supersedes data of 2003 Sep 15 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PIMH9; PUMH9; R1 = 10 k , R2 = 47 k PEMH9 FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER T

MOSTRAR MÁS

Otros transistores... EMH52, EMH53, EMH59, EMH6, EMH60, EMH61, EMH6FHA, EMH75, BC558, EMH9FHA, EML17, EML20, FA4A3Q, FA4A4L, FA4A4M, FA4A4P, FA4A4Z