EMH9 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMH9
SMD Transistor Code: H9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.07
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SC-107C
EMH9 Transistor Equivalent Substitute - Cross-Reference Search
EMH9 Datasheet (PDF)
emh9.pdf
EMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9 UMH9N R2(SC-107C) 47kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) (3) 1) Built-In Biasing Resistor
emh9 umh9n imh9a umh9n.pdf
EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A External dimensions (Unit : mm) Features 1) Two DTC114Ys chips in a EMT or UMT or SMT EMH9package. (4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2)(6) (1)1.2automatic mounting machines. 1.63) Transistor elements are independent, eliminating interferen
emh9.pdf
EMH9 digital transistor (NPN+ NPN)SOT-563 FEATURES Two DTC114Ys chips in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKINGH9 Absolute maximum ratings(Ta=25) Parameter Symbol Unit Limits Supply voltage VCC 50 VInput voltage VIN -6~40 VIO 70Output current mA IC
pimh9 pumh9 pemh9.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPIMH9; PUMH9; PEMH9NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Sep 15 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PIMH9; PUMH9; R1 = 10 k, R2 = 47 k PEMH9FEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER T
pimh9 pumh9 pemh9.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPIMH9; PUMH9; PEMH9NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Sep 15 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PIMH9; PUMH9; R1 = 10 k, R2 = 47 k PEMH9FEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER T
emh9fha umh9nfha.pdf
EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6
emh9fha umh9nfha imh9afra.pdf
EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6
chemh9gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMH9GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
