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HBA114TS6R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HBA114TS6R

Código: 0E

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: SOT-363R

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HBA114TS6R Datasheet (PDF)

1.1. hba114ts6r.pdf Size:234K _upd

HBA114TS6R
HBA114TS6R

Spec. No. : C254S6R Issued Date : 2003.05.23 CYStech Electronics Corp. Revised Date : 2011.02.21 Page No. : 1/6 Dual PNP Digital Transistors HBA114TS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isol

1.2. hba114ts6r.pdf Size:248K _cystek

HBA114TS6R
HBA114TS6R

Spec. No. : C254S6R Issued Date : 2003.05.23 CYStech Electronics Corp. Revised Date : 2011.02.21 Page No. : 1/6 Dual PNP Digital Transistors HBA114TS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isol

 4.1. hba114es6r.pdf Size:237K _upd

HBA114TS6R
HBA114TS6R

Spec. No. : C252S6R Issued Date : 2003.05.27 CYStech Electronics Corp. Revised Date : 2011.02.21 Page No. : 1/6 Dual PNP Digital Transistors HBA114ES6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isol

4.2. hba114es6r.pdf Size:251K _cystek

HBA114TS6R
HBA114TS6R

Spec. No. : C252S6R Issued Date : 2003.05.27 CYStech Electronics Corp. Revised Date : 2011.02.21 Page No. : 1/6 Dual PNP Digital Transistors HBA114ES6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isol

Otros transistores... GN4L3M , GN4L3N , GN4L3Z , GN4L4K , GN4L4L , GN4L4M , GN4L4Z , HBA114ES6R , BD135 , HBA143ES6R , HBA143TS6R , HBA143ZS6R , HBA144ES6R , HBC114ES6R , HBC114TS6R , HBC114YC6 , HBC114YS5 .

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