HBA114TS6R Specs and Replacement
Type Designator: HBA114TS6R
SMD Transistor Code: 0E
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-363R
HBA114TS6R Substitution
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HBA114TS6R datasheet
Spec. No. C254S6R Issued Date 2003.05.23 CYStech Electronics Corp. Revised Date 2011.02.21 Page No. 1/6 Dual PNP Digital Transistors HBA114TS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isol... See More ⇒
Spec. No. C252S6R Issued Date 2003.05.27 CYStech Electronics Corp. Revised Date 2011.02.21 Page No. 1/6 Dual PNP Digital Transistors HBA114ES6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isol... See More ⇒
Detailed specifications: GN4L3M, GN4L3N, GN4L3Z, GN4L4K, GN4L4L, GN4L4M, GN4L4Z, HBA114ES6R, 2SC1815, HBA143ES6R, HBA143TS6R, HBA143ZS6R, HBA144ES6R, HBC114ES6R, HBC114TS6R, HBC114YC6, HBC114YS5
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