KSR1214 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR1214

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 68

Encapsulados: TO92S

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KSR1214 datasheet

 ..1. Size:19K  samsung
 ksr1214.pdf pdf_icon

KSR1214

KSR1214 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=47 ) Complement to KSR2214 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base

 8.1. Size:35K  samsung
 ksr1210.pdf pdf_icon

KSR1214

KSR1210 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR2210 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Volta

 8.2. Size:19K  samsung
 ksr1213.pdf pdf_icon

KSR1214

KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2 , R2=47 ) Complement to KSR2213 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base

 8.3. Size:18K  samsung
 ksr1212.pdf pdf_icon

KSR1214

KSR1212 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR2212 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Volta

MOSTRAR MÁS

Otros transistores... KSR1206, KSR1207, KSR1208, KSR1209, KSR1210, KSR1211, KSR1212, KSR1213, 2SA1015, KSR2201, KSR2202, KSR2203, KSR2204, KSR2205, KSR2206, KSR2207, KSR2208