KSR1214 Specs and Replacement

Type Designator: KSR1214

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: TO92S

 KSR1214 Substitution

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KSR1214 datasheet

 ..1. Size:19K  samsung

ksr1214.pdf pdf_icon

KSR1214

KSR1214 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=47 ) Complement to KSR2214 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base... See More ⇒

 8.1. Size:35K  samsung

ksr1210.pdf pdf_icon

KSR1214

KSR1210 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR2210 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Volta... See More ⇒

 8.2. Size:19K  samsung

ksr1213.pdf pdf_icon

KSR1214

KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2 , R2=47 ) Complement to KSR2213 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base... See More ⇒

 8.3. Size:18K  samsung

ksr1212.pdf pdf_icon

KSR1214

KSR1212 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR2212 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Volta... See More ⇒

Detailed specifications: KSR1206, KSR1207, KSR1208, KSR1209, KSR1210, KSR1211, KSR1212, KSR1213, 2SA1015, KSR2201, KSR2202, KSR2203, KSR2204, KSR2205, KSR2206, KSR2207, KSR2208

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