MUN5111DW1T1G Todos los transistores

 

MUN5111DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MUN5111DW1T1G
   Código: 0A
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT-363

 Búsqueda de reemplazo de transistor bipolar MUN5111DW1T1G

 

MUN5111DW1T1G Datasheet (PDF)

 ..1. Size:198K  onsemi
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MUN5111DW1T1G
MUN5111DW1T1G

MUN5111DW1T1G Series,SMUN5111DW1T1G SeriesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to

 0.1. Size:918K  lrc
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MUN5111DW1T1G
MUN5111DW1T1G

LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are

 2.1. Size:226K  onsemi
mun5111dw1t1-d.pdf

MUN5111DW1T1G
MUN5111DW1T1G

MUN5111DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with ahttp://onsemi.commonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to(3) (

 3.1. Size:89K  onsemi
nsvmun5111dw1t3g.pdf

MUN5111DW1T1G
MUN5111DW1T1G

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

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History: MUN5130DW1T1G | MUN5213DW

 

 
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